22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.

SeungGyeon Lim Dong-Uk Lee Ho Sung Cho Jihwan Kim Young Jun Ku Sangmuk Oh Chul Dae Kim Hyun Woo Kim Wooyoung Lee Tae-Kyun Kim 0001 Tae Sik Yun Min Jeong Kim SeungGyeon Lim Seong Hee Lee Byung Kuk Yun Jun Il Moon Ji Hwan Park Seokwoo Choi Young Jun Park 0006 Chang Kwon Lee Chunseok Jeong Jae-Seung Lee Sang Hun Lee Woo Sung We Jong Chan Yun Doobock Lee Junghyun Shin Seungchan Kim Junghwan Lee Jiho Choi Yucheon Ju Myeong-Jae Park Kang Seol Lee Youngdo Hur Daeyong Shim Sangkwon Lee Junhyun Chun Kyowon Jin 22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. 334-336 2020 ISSCC https://doi.org/10.1109/ISSCC19947.2020.9062977 conf/isscc/2020 db/conf/isscc/isscc2020.html#LeeCKKOKKLKYKLL20 Ho Sung Cho Jiho Choi Seokwoo Choi Junhyun Chun Youngdo Hur Chunseok Jeong Kyowon Jin Yucheon Ju Chul Dae Kim Hyunwoo KimHyun Woo Kim Jihwan Kim Min Jeong Kim Seungchan Kim Tae-Kyun Kim 0001 Young Jun Ku Chang Kwon Lee Dong-Uk Lee Doobock Lee Jae-Seung Lee Junghwan Lee Kang Seol Lee Sang-Hun LeeSang Hun Lee Sangkwon Lee Seong Hee Lee Wooyoung Lee Jun Il Moon Sangmuk Oh Ji Hwan Park Myeong-Jae Park Young-Jun Park 0006Young Jun Park 0006 Daeyong Shim Junghyun Shin Woo Sung We Byung Kuk Yun Jong Chan Yun Tae Sik Yun